052-6341 rev f 6 - 2011 absolute maximum ratings symbol parameter ratings unit v ces collector emitter voltage 600 v i c1 continuous collector current @ t c = 25c 121 a i c2 continuous collector current @ t c = 100c 68 i cm pulsed collector current 1 202 v ge gate-emitter voltage 2 30 v p d total power dissipation @ t c = 25c 520 w ssoa switching safe operating area @ t j = 150c 202a @ 600v t j , t stg operating and storage junction temperature range -55 to 150 c t l lead temperature for soldering: 0.063" from case for 10 seconds 300 typical applications zvs phase shifted and other full bridge half bridge high power pfc boost welding ups, solar, and other inverters high frequency, high ef? ciency industrial features fast switching with low emi very low e off for maximum ef? ciency ultra low c res for improved noise immunity low conduction loss low gate charge increased intrinsic gate resistance for low emi rohs compliant power mos 8 ? is a high speed punch-through switch-mode igbt. low e off is achieved through leading technology silicon design and lifetime control processes. a reduced e off - v ce(on) tradeoff results in superior ef ? ciency compared to other igbt technologies. low gate charge and a greatly reduced ratio of c res /c ies provide excellent noise immunity, short delay times and simple gate drive. the intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low emi, even when switching at high frequency. microsemi website - http://www.microsemi.com high speed pt igbt static characteristics t j = 25c unless otherwise speci? ed symbol parameter test conditions min typ max unit v br(ces) collector-emitter breakdown voltage v ge = 0v, i c = 250 a 600 v v ce(on) collector-emitter on voltage v ge = 1 5 v, i c = 40a t j = 25c 2.0 2.5 t j = 125c 1.9 v ge(th) gate emitter threshold voltage v ge =v ce , i c = 1ma 3 4.5 6 i ces zero gate voltage collector current v ce = 600v, v ge = 0v t j = 25c 275 a t j = 125c 3000 i ges gate-emitter leakage current v gs = 30v 100 na combi (igbt and diode) APT68GA60LD40 to-247 apt68ga60b2d40 APT68GA60LD40 apt68ga60b2d40 600v downloaded from: http:///
052-6341 rev f 6 - 2011 thermal and mechanical characteristics dynamic characteristics t j = 25c unless otherwise speci? ed apt68ga60l_b2d40 symbol characteristic min typ max unit r jc junction to case thermal resistance (igbt) - - .24 c/w r jc junction to case thermal resistance (diode) .67 w t package weight - 6.1 - g torque mounting torque (to-264 package), 4-40 or m3 screw 10 inlbf symbol parameter test conditions min typ max unit c ies input capacitance capacitance v ge = 0v, v ce = 25v f = 1mhz 5230 pf c oes output capacitance 526 c res reverse transfer capacitance 59 q g 3 total gate charge gate charge v ge = 15v v ce = 300v i c = 40a 198 q ge gate-emitter charge 32 nc q gc gate- collector charge 66 ssoa switching safe operating area t j = 150c, r g = 4.7 4 , v ge = 15v, l= 100uh, v ce = 600v 202 a t d(on) turn-on delay time inductive switching (25c) v cc = 400v v ge = 15v i c = 40a r g = 4.7 4 t j = +25c 21 ns t r current rise time 27 t d(off) turn-off delay time 133 t f current fall time 88 e on2 turn-on switching energy 715 j e off 6 turn-off switching energy 607 t d(on) turn-on delay time inductive switching (125c) v cc = 400v v ge = 15v i c = 40a r g = 4.7 4 t j = +125c 20 ns t r current rise time 26 t d(off) turn-off delay time 175 t f current fall time 129 e on2 turn-on switching energy 1117 j e off 6 turn-off switching energy 1025 1 repetitive rating: pulse width and case temperature limited by maximum junction temperature. 2 pulse test: pulse width < 380 s , duty cycle < 2%. 3 see mil-std-750 method 3471.4 r g is external gate resistance, not including internal gate resistance or gate driver impedance. (mic4452) 5 e on2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the igbt turn on energy loss. a combi device is used for the clamping diode.6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. microsemi reserves the right to change, without notice, the speci? cations and information contained herein. downloaded from: http:///
052-6341 rev f 6 - 2011 typical performance curves apt68ga60l_b2d40 0 20 40 60 80 100 120 140 25 50 75 100 125 150 0 1 2 3 4 5 0 25 50 75 100 125 150 0 5 10 15 20 0 40 80 120 160 200 0 1 2 3 4 6 8 10 12 14 16 0 40 80 120 160 200 240 0 2 4 6 8 10 12 0 50 100 150 200 250 300 350 0 4 8 12 16 20 24 28 32 0 20 40 60 80 100 120 0 1 2 3 4 5 6 250 s pulse test<0.5 % duty cycle t j = 25c. 250 s pulse test <0.5 % duty cycle v ge = 15v. 250 s pulse test <0.5 % duty cycle i c = 20a i c = 40a i c = 80a i c = 40a i c = 80a 13v 5v 15v i c = 40a t j = 25c v ce = 480v v ce = 300v v ce = 120v t j = 25c t j = -55c v ge = 15v t j = 55c t j = 150c v ce , collector-to-emitter voltage (v) figure 1, output characteristics (t j = 25c) i c , collector current (a) t j = 25c t j = 125c v ce , collector-to-emitter voltage (v) figure 2, output characteristics (t j = 25c) i c , collector current (a) t j = 125c v ge , gate-to-emitter voltage (v) figure 3, transfer characteristics i c , collector current (a) v ge , gate-to-emitter voltage (v) figure 5, on state voltage vs gate-to-emitter voltage v ce , collector-to-emitter voltage (v) gate charge (nc) figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 6, on state voltage vs junction temperature v ce , collector-to-emitter voltage (v) t c , case temperature (c) figure 8, dc collector current vs case temperature i c , dc collector current (a) -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 t j , junction temperature figure 7, threshold voltage vs junction temperature v gs(th) , threshold voltage (normalized) 6v 7v 8v i c = 20a 9v 10v downloaded from: http:///
052-6341 rev f 6 - 2011 0 5 10 15 20 25 30 0 20 40 60 80 0 50 100 150 200 250 0 10 20 30 40 50 60 70 80 0 500 1000 1500 2000 2500 3000 0 25 50 75 100 125 0 1000 2000 3000 4000 5000 6000 7000 8000 0 10 20 30 40 50 0 500 1000 1500 2000 2500 3000 0 10 20 30 40 50 60 70 80 0 1000 2000 3000 0 10 20 30 40 50 60 70 80 0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 80 v ge =15v,t j =125c v ge =15v,t j =25c v ce = 400v r g = 4.7 l = 100 h v ce = 400v v ge = +15v r g =4.7 v ce = 400v t j = 25c , or 125c r g = 4.7 l = 100 h v ge = 15v v ce = 400v v ge = +15v r g = 4.7 v ce = 400v v ge = +15v r g = 4.7 r g = 4.7 , l = 100 h, v ce = 400v t j = 125c t j = 25c t j = 125c t j = 25c r g = 4.7 , l = 100 h, v ce = 400v t j = 25 or 125c,v ge = 15v t j = 125c, v ge = 15v t j = 25c, v ge = 15v e on2, 80a e on2, 40a e off, 40a e on2, 20a e off, 20a v ce = 400v v ge = +15v t j = 125c e on2, 80a e on2, 40a e off, 80a e off, 40a e on2, 20a e off, 20a i ce , collector-to-emitter current (a) figure 9, turn-on delay time vs collector current t d(on) , turn-on delay time (ns) i ce , collector-to-emitter current (a) figure 10, turn-off delay time vs collector current t d(off) , turn-off delay time (ns) i ce , collector-to-emitter current (a) figure 11, current rise time vs collector current t r , rise time (ns) i ce , collector-to-emitter current (a) figure 12, current fall time vs collector current t r , fall time (ns) i ce , collector-to-emitter current (a) figure 13, turn-on energy loss vs collector current e on2 , turn on energy loss ( j) i ce , collector-to-emitter current (a) figure 14, turn-off energy loss vs collector current e off , turn off energy loss ( j) r g , gate resistance (ohms) figure 15, switching energy losses vs gate resistance switching energy losses ( j) t j , junction temperature (c) figure 16, switching energy losses vs junction temperature switching energy losses ( j) e off, 80a typical performance curves apt68ga60l_b2d40 downloaded from: http:///
052-6341 rev f 6 - 2011 typical performance curves apt68ga60l_b2d40 0 0.05 0.10 0.15 0.20 0.25 0.30 10 -5 10 -4 10 -3 10 -2 0.1 1 10 100 1000 10000 0 100 200 300 400 500 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 19, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.5 0.1 0.05 c oes c res c ies peak t j = p dm x z jc +t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: v ce , collector-to-emitter voltage (volts) figure 17, capacitance vs collector-to-emitter voltage c, capacitance (pf) 0.1 1 10 100 1000 1 10 100 800 v ce , collector-to-emitter voltage figure 18, minimum switching safe operating area i c , collector current (a) downloaded from: http:///
052-6341 rev f 6 - 2011 figure 21, turn-on switching waveforms and de? nitions t j = 125c collector current collector voltage gate voltage 5% 10% t d(on) 90% 10% t r 5% switching energy figure 22, turn-off switching waveforms and de? nitions t j = 125c collector voltage collector current gate voltage switching energy 0 t d(off) 10% t f 90% i c a d.u.t. v ce v cc apt30dq60 figure 20, inductive switching test circuit apt68ga60l_b2d40 downloaded from: http:///
052-6341 rev f 6 - 2011 static electrical characteristics dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. ultrafast soft recovery rectifier diode symbol characteristic / test conditions apt68ga60l_b2d40 unit i f(av) maximum average forward current (t c = 111c, duty cycle = 0.5) 40 amps i f(rms) rms forward current (square wave, 50% duty) 63 i fsm non-repetitive forward surge current (t j = 45c, 8.3 ms) 320 symbol characteristic / test conditions min type max unit v f forward voltage i f = 40a 2.0 volts i f = 80a 2.5 i f = 40a, t j = 125c 1.7 symbol characteristic test conditions min typ max unit t rr reverse recovery time i f = 1a, di f /dt = -100a/ s , v r = 30v, t j = 25 c - 22 - ns t rr reverse recovery time i f = 40a, di f /dt = -200a/ s v r = 400v, t c = 25 c - 25 - q rr reverse recovery charge - 35 - nc i rrm maximum reverse recovery current - 3 - amps t rr reverse recovery time i f = 40a, di f /dt = -200a/ s v r = 400v, t c = 125 c - 160 -n s q rr reverse recovery charge - 480 - nc i rrm maximum reverse recovery current - 6 - amps t rr reverse recovery time i f = 40a, di f /dt = -1000a/ s v r = 400v, t c = 125 c - 85 - ns q rr reverse recovery charge - 920 -n c i rrm maximum reverse recovery current - 20 - amps z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 23. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.700.60 0.50 0.40 0.30 0.20 0.10 0 0.5 single pulse 0.1 0.3 0.7 0.05 peak t j = p dm x z jc +t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: d = 0.9 l downloaded from: http:///
052-6341 rev f 6 - 2011 dynamic characteristics t j = 25c unless otherwise speci? ed apt68ga60l_b2d40 t j = 125 c v r = 400v 20a 40a 80a 180160 140 120 100 8060 40 20 0 2520 15 10 50 duty cycle = 0.5 t j = 175 c 0 25 50 75 100 125 150 25 50 75 100 125 150 175 1 10 100 200 8070 60 50 40 30 20 10 0 c j , junction capacitance k f , dynamic parameters (pf) (normalized to 1000a/ s) i f(av) (a) t j , junction temperature ( c) case temperature ( c) figure 28. dynamic parameters vs. junction temperature figure 29. maximum average forward current vs. casetemperature v r , reverse voltage (v) figure 30. junction capacitance vs. reverse voltage v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 24. forward current vs. forward voltage figure 25. reverse recovery time vs. current rate of change -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 26. reverse recovery charge vs. current rate of change figure 27. reverse recovery current vs. current rate of change q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j = 175 c t j = -55 c t j = 25 c t j = 125 c t j = 125 c v r = 400v 80a 20a 40a 0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 120100 8060 40 20 0 14001200 1000 800600 400 200 0 t j = 125 c v r = 400v 80a 40a 20a t rr q rr q rr t rr i rrm 1.41.2 1.0 0.8 0.6 0.4 0.2 0.0 200180 160 140 120 100 8060 40 20 0 downloaded from: http:///
052-6341 rev f 6 - 2011 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) gate these dimensions are equal to the to-247 without the mounting hole. 2-plcs. 19.51 (.768)20.50 (.807) 19.81 (.780)21.39 (.842) 25.48 (1.003)26.49 (1.043) 2.29 (.090)2.69 (.106) 0.76 (.030)1.30 (.051) 3.10 (.122)3.48 (.137) 4.60 (.181)5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019)0.84 (.033) collecto emitte gate dimensions in millimeters and (inches) 2.29 (.090)2.69 (.106) 5.79 (.228)6.20 (.244) 2.79 (.110)3.18 (.125) 5.45 (.215) bsc 2-plcs. dimensions in millimeters and (inches) collectoemitte collecto collecto dynamic characteristics t j = 25c unless otherwise speci? ed apt68ga60l_b2d40 4 3 1 2 5 zer o 0.25 i rr m pearson 2878 current transformer di f /dt adjus t 30h d.u.t. +18v 0v v r t rr / q rr waveform t-max tm (b2) package outline to-264 (l) package outline (cathode) (anode) (cathode) (anode) (cathode) figure 32. diode reverse recovery waveform de? nition figure 31. diode test circuit i f - forward conduction current di f /dt - rate of diode current change through zero crossing. i rrm - maximum reverse recovery current t rr - reverse recovery time measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through i rrm and 0.25, i rrm passes through zero. q rr - area under the curve de ? ned by i rrm and t rr. 5 1 2 3 4 1 . 0 1 6 ( . 0 4 0 ) 1.016 (.040) downloaded from: http:///
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